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PCB Mounted Ceramic |
Single Site Ceramic |
AttoFastTM Single Site Ceramic |
Small Multi-Site 72mm Ceramic |
200mm Multi-Site (full wafer) |
300mm Multi-Site (full wafer) |
VersaTileTM TVLC
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VersaTileTM TVLL |
VersaTileTM TVHT |
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| Operating Temperature Range |
| 5°C to 85°C |
X |
X |
X |
X |
X |
X |
X |
X |
X |
| 5°C to 200°C |
X |
X |
X |
X |
X |
X |
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X |
X |
| -65°C to 300°C |
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X |
X |
X |
X |
X |
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X |
X |
| 5°C to 300°C |
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X |
X |
X |
X |
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X |
X |
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| Expansion Matched |
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X |
X |
X |
X |
X |
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X |
X |
| Electrical Characteristics |
| Ultra low leakage (<1 Fempto Amps/Volt) and fast settling time (<1 second) |
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X |
X |
X |
X |
X |
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X |
X |
| Low leakage (<5 Fempto Amps/Volt) and medium settling time (<5 seconds) |
X |
X |
X |
X |
X |
X |
X |
X |
X |
| High Current, High Voltage Option |
X |
X |
X |
X |
X |
X |
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X |
X |
| Probe Station Mount |
| Fits Std. RF Positioner with Planarization |
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X |
X |
X |
| Fits Std. 4.5 Inch Probe Card Holder |
X |
X |
X |
X |
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X |
X |
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| Uses Celadon Modular AdapterTM to mount probe card |
X |
X |
X |
X |
X |
X |
X |
X |
X |
| Fits Std. 4.5 Inch Probe Card Holder with Single Site VersaPlateTM |
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X |
X |
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| Unique Features |
| Single-site |
X |
X |
X |
X |
X |
X |
X |
X |
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| Multi-site |
X |
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X |
X |
X |
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| Rigid Ceramic Construction |
X |
X |
X |
X |
X |
X |
X |
X |
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| Rigid Metal Chassis |
X |
X |
X |
X |
X |
X |
X |
X |
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| Low Cost of Ownership |
X |
X |
X |
X |
X |
X |
X |
X |
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| Supports Ultra Fast Probing on Low Current Devices |
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X |
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| Crash Resistant Probes in Recessed Ceramic Cavity Available |
X |
X |
X |
X |
X |
X |
X |
X |
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| Autoprober Light Tight Shielded Environmental Enclosure |
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X |
X |
X |
X |
X |
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X |
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| Applications |
| Production and Functional Test |
X |
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X |
X |
X |
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| Multi-Site Production or Parallel Test |
X |
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| Process Development and Device Characterization |
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X |
X |
X |
X |
X |
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X |
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| High Accuracy Process Development and Device Characterization |
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X |
X |
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X |
| Transistor hot carrier injection (HCI) |
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X |
X |
X |
X |
X |
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X |
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| Eletromigration (EM) |
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X |
X |
X |
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X |
X |
| Transistor negative bias temperature instability (NBTI) |
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X |
X |
X |
X |
X |
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X |
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| Time dependent dielectric breakdown (TDDB) |
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X |
X |
X |
X |
X |
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X |
X |
| Wafer level burn-in |
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X |
X |
X |
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X |
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| Wafer level life test |
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X |
X |
X |
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X |
X |